- Optional Devices
- Optional Devices
- The MonoCL4 family are all compatible with conventional, low vacuum or field emission SEMs, combined FIB/SEMs and ion microscopes.
- Low injection conditions for high spatial resolution,
avoiding non-equilibrium conditions and minimising
- Narrow band pass operation for high spectral resolu-
tion and monochromatic imaging
- Shorter acquisition times for enhanced productivity
- CL applications for many specimens, even from SEMs
with limited beam current
- CL from restricted generation volumes e.g. thin films,
nanowires, nanoparticles and TEM specimens
- Panchromatic and monochromatic imaging with high
spatial and spectral resolution
- Point and click’ selection of spectroscopy, imaging
and mapping modes
- Shortpass, longpass and bandpass imaging using filter options for increased flexibility
- Detector and diffraction grating options optimised for your application in the ultra violet, visible and infra red wavelength ranges
- Computer and/or manual control of detector settings
- Factory recorded spectral response files Enhanced sensitivity in the ultra violet and infra red wavelengths
- UV optimised option, allowing analysis to wavelengths below 200 nm
- Time evolved signal monitoring
- New design and software features make the interchange of gratings easier than ever whilst maintaining spectral calibration
- The modular structure allows convenient and cost effective upgrade paths to the premium packages or to extend the useable wavelength range using additional detectors.
- MonoCL4 Swift is as MonoCL4 but includes an additional array detector enabling.
- Rapid ‘parallel’ spectral acquisition for superior productivity
- Crucial to obtaining results from beam sensitive specimens
- Schottky eld emission gun (continuous system) or picosecond pulsed photoelectron gun (time-resolved option).
Acceleration voltage : 3 – 0 kV
- Electron optical column with electro-magnetic lenses, magnetic deflectors and astigmatism correctors. Optimized
for continuous and pulsed operation.
- Highest spatial resolution : < 10 nm from 3 to 10 kV
- Analytical working distance : 3 mm
- No loss of SE resolution in cathodoluminescence mode.
- Field-upgradable to picosecond pulsed photoelectron gun.
- MLLS fitting of data using reference spectra to produce fit-coefficient maps.
- Gaussian curves can be fitted to spectra providing amplitude, peak-shift & -width mapping. Useful for mapping
changes in alloy composition and stress mapping in semiconductor and ceramic materials.
- Sub-pixel scanning for improved statistical confidence.
- Stage mapping option for extended field of view.
- Simultaneous SI acquisition of other signals available e.g. EDS or EELS.